Calcola la Spedizione Inserisci i dettagli della consegna per verificare tariffe spedizione

Samsung MZ-V9S1T0 1 TB M.2 PCI Express 4.0 NVMe V-NAND TLC

€184.42
Availability: In stock
SKU
8806095575674
Samsung MZ-V9S1T0, 1 TB, M.2, 7150 MB/s

Brand: SAMSUNG | Codice Produttore : MZ-V9S1T0BW | Ean: 8806095575674
Spectacular speed everyday
Blast through tasks faster. 990 EVO Plus with the latest NAND offers boosted sequential read/write speeds up to 7,250/6,300MB/s. Huge files, instant transfer.

Keep cool and power through your day
Optimised efficiency, extended performance. The nickel-coated controller increases MB/s per Watt by 73% compared to the 990 EVO, achieving the same power level and thermal control with less power consumption. Stay focused on work or play without worrying about overheating or battery life.

Extra space. Extra speed.
Harness the full power of your drive with enhanced Intelligent TurboWrite 2.0. Process massive data faster and breeze through heavy graphics with an enlarged TurboWrite region, now available in 4TB capacity.

Samsung Magician software
Make your SSD work like magic. Samsung Magician software's optimisation tools ensure the best SSD performance. It's a safe and easy way to migrate all your data for a Samsung SSD upgrade. Protect valuable data, monitor drive health, and get the latest firmware updates.

Bringing innovations to life
For decades, Samsungs NAND flash memory has powered groundbreaking technologies that have changed every part of our daily lives. This NAND flash technology also powers our consumer SSDs, making room for the next big push of innovation.

Performance
Up to 7,250MB/s of sequential read speed, 45% faster speed than the previous model, the 990 EVO.

Power efficiency
Power efficiency enhanced by 73% compared to the 990 EVO for more MB/s per watt, while maintaining performance and thermal control.

Versatility
Up to 4TB capacity and rapid Intelligent TurboWrite 2.0.

Features

NVMe version
2.0
Security algorithms
256-bit AES
SSD capacity*
1 TB
SSD form factor*
M.2
Interface*
PCI Express 4.0
NVMe*
Yes
Memory type*
V-NAND TLC
Component for*
PC
Hardware encryption*
Yes
M.2 SSD size
2280 (22 x 80 mm)
Read speed
7150 MB/s
Write speed
6300 MB/s
Random read (4KB)
850000 IOPS
Random write (4KB)
1350000 IOPS
DevSlp (device sleep) support
Yes
S.M.A.R.T. support
Yes
TRIM support
Yes
Mean time between failures (MTBF)
1500000 h

Power

Operating voltage
3.3 V

Power

Power consumption (read)
4.3 W
Power consumption (write)
4.2 W
Average power consumption (read)
4.3 W
Average power consumption (write)
4.2 W
Power consumption (idle)
0.06 W
Power consumption DevSlp (device sleep)
5 mW

Weight & dimensions

Width
80.2 mm
Depth
2.38 mm
Height
80.2 mm
Weight
9 g

Packaging data

Package width
145 mm
Package depth
100 mm
Package height
24 mm
Package weight
68 g

Operational conditions

Operating temperature (T-T)
0 - 70 °C
Operating shock
1500 G


Deposito 31

Calcola la Spedizione Inserisci i dettagli della consegna per verificare tariffe spedizione

Spedizione e Consegna

Il tuo ordine verrà spedito entro il tempo indicato sulla pagina del prodotto. Una volta spedito, la consegna avviene generalmente entro 24/48 ore lavorative.

Nota sui prodotti voluminosi:


Per garantire un trasporto più sicuro e adeguato, in caso di articoli particolarmente ingombranti potremmo affidarci a un corriere specializzato. In questi casi i tempi di consegna potrebbero essere leggermente più lunghi.

Brand: SAMSUNG | Codice Produttore : MZ-V9S1T0BW | Ean: 8806095575674
Spectacular speed everyday
Blast through tasks faster. 990 EVO Plus with the latest NAND offers boosted sequential read/write speeds up to 7,250/6,300MB/s. Huge files, instant transfer.

Keep cool and power through your day
Optimised efficiency, extended performance. The nickel-coated controller increases MB/s per Watt by 73% compared to the 990 EVO, achieving the same power level and thermal control with less power consumption. Stay focused on work or play without worrying about overheating or battery life.

Extra space. Extra speed.
Harness the full power of your drive with enhanced Intelligent TurboWrite 2.0. Process massive data faster and breeze through heavy graphics with an enlarged TurboWrite region, now available in 4TB capacity.

Samsung Magician software
Make your SSD work like magic. Samsung Magician software's optimisation tools ensure the best SSD performance. It's a safe and easy way to migrate all your data for a Samsung SSD upgrade. Protect valuable data, monitor drive health, and get the latest firmware updates.

Bringing innovations to life
For decades, Samsungs NAND flash memory has powered groundbreaking technologies that have changed every part of our daily lives. This NAND flash technology also powers our consumer SSDs, making room for the next big push of innovation.

Performance
Up to 7,250MB/s of sequential read speed, 45% faster speed than the previous model, the 990 EVO.

Power efficiency
Power efficiency enhanced by 73% compared to the 990 EVO for more MB/s per watt, while maintaining performance and thermal control.

Versatility
Up to 4TB capacity and rapid Intelligent TurboWrite 2.0.

Features

NVMe version
2.0
Security algorithms
256-bit AES
SSD capacity*
1 TB
SSD form factor*
M.2
Interface*
PCI Express 4.0
NVMe*
Yes
Memory type*
V-NAND TLC
Component for*
PC
Hardware encryption*
Yes
M.2 SSD size
2280 (22 x 80 mm)
Read speed
7150 MB/s
Write speed
6300 MB/s
Random read (4KB)
850000 IOPS
Random write (4KB)
1350000 IOPS
DevSlp (device sleep) support
Yes
S.M.A.R.T. support
Yes
TRIM support
Yes
Mean time between failures (MTBF)
1500000 h

Power

Operating voltage
3.3 V

Power

Power consumption (read)
4.3 W
Power consumption (write)
4.2 W
Average power consumption (read)
4.3 W
Average power consumption (write)
4.2 W
Power consumption (idle)
0.06 W
Power consumption DevSlp (device sleep)
5 mW

Weight & dimensions

Width
80.2 mm
Depth
2.38 mm
Height
80.2 mm
Weight
9 g

Packaging data

Package width
145 mm
Package depth
100 mm
Package height
24 mm
Package weight
68 g

Operational conditions

Operating temperature (T-T)
0 - 70 °C
Operating shock
1500 G


Deposito 31